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| NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line- operated Switchmode Power supplies and electronic light ballasts. Features: D Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn-Off (No Current Tail) Absolute Maximum Ratings: Collector-Emitter Sustaining Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Breakdown Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Maximum Lead Temperature (During Soldering, 1/8" from Case for 5sec), TL . . . . . . . . . . . +260C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Note 2. Proper strike and creepage distance must be provided. Electrical Characteristics: (TC = +25C, unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus IC = 100mA, L = 25mH ) Symbol Test Conditions Min 450 - - - - - - - - Typ - - - - - - 0.83 0.94 0.25 0.27 0.35 0.4 - 32 10 8 17 22 14 75 5.5 12.0 3.0 7.0 9.5 14.5 2.0 7.5 90 100 1.7 2.1 200 130 1.2 1.5 Max - 100 100 500 100 100 1.2 1.3 0.6 0.65 0.7 0.8 34 - - - - - - 120 - - - - - - - - 180 - 2.5 - 300 - 2.5 - Unit V A A A A A V V V V V V ICEO ICES VCE = 450V, IB = 0 VCE = 1000V, VEB = 0 VCE = 1000V, VEB = 0, TC = +125C VCE = 800V, VEB = 0, TC = +125C Emitter Cutoff Current ON Characteristics Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IEBO VBE(sat) VCE(sat) VEB = 9V, IC = 0 IC = 1.3A, IB = 0.13A IC = 3A, IB = 0.6A IC = 1.3A, IB = 0.13A TC = +125C IC = 3A, IB = 0.6A TC = +125C - - - 14 - 6 5 11 10 - - - - DC Current Gain hFE IC = 0.5A, VCE = 5V TC = +125C IC = 3A, VCE = 1V TC = +125C IC = 1.3A, VCE = 1V IC = 10mA, VCE = 5V TC = +25C to +125C V Dynamic Characteristics Current Gain Bandwidth Product Output Capacitance Input Capacitance fT Cob Cib IC = 0.5A, VCE = 10V, f = 1MHz VCB = 10V, IB = 0, f = 1MHz VEB = 8V IC = 1.3A, IB1 = 130mA, VCC = 300V 1s TC = +125C 3s TC = +125C IC = 3.0A, IB1 = 600mA, VCC = 300V 1s TC = +125C 3s TC = +125C Switching Characteristics: Resistive Load (DC 10%, Pulse Width = 20s) Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time ton toff TC = +125C ton toff IC = 1.3A, IB1 = 130mA, IB2 = 650mA, TC = +125C VCC = 300V TC = +125C IC = 3A, IB1 = 600mA, IB2 = 1.5A, VCC = 300V - TC = +125C - - - - - - - ns ns s s ns ns s s MHz pF pF V V V V V V V V 1000 1500 VCE(dsat) Dynamic Saturation Voltage: Determined 1s and 3s respectively after rising IB1 reaches 90% of final IB1 - - - - - - - Electrical Characteristics (Cont'd): (TC = +25C, unless otherwise specified) Parameter Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time Symbol tfi tsi TC = +125C tc TC = +125C tfi tsi TC = +125C tc TC = +125C IC = 3A, IB1 = 600mA, IB2 = 1.5A TC = +125C Test Conditions IC = 1.5A, IB1 = 130mA, IB2 = 650mA TC = +125C Min - - - - - - - - - - - - Typ 100 120 1.5 1.9 220 230 85 120 2.15 2.75 200 310 Max 180 - 2.5 - 350 - 150 - 3.2 - 300 - Unit ns ns s s ns ns ns ns s s ns ns Switching Characteristics: Inductive Load (Vclamp = 300V, VCC = 15V, l = 200H) .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
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